发布时间 : 星期二 文章第三章 - CMOS反相器介绍及设计 - 图文更新完毕开始阅读
DDRonVin = VDD简化的RC充放电近似
tpHL = f(Ron.CL)= 0.69 RonCLVoutVoutln(0.5)RL的函数
on、CL均是电压VDD0.5RonCLDepartment of Microelectronics, PKU，Xiaoyan Liu
延迟时间的近似估算32.521.510.50-0.50?tp= 0.69 CL(Reqn+Reqp)/2tpHLtpLHVout(V)0.51t (sec)1.52x 102.5-10Department of Microelectronics, PKU，Xiaoyan Liu
反相器的负载电容
Department of Microelectronics, PKU，Xiaoyan Liu
CMOS反相器中功耗
E = CLVDD2 P0?1+ tscVDDIpeak P0?1 + VDDIleakage
f0?1= P0?1* fclock
P = CLVDD2f0?1 + tscVDDIpeakf0?1 +VDDIleakage
动态、Dynamic
power
静态、Short-circuit power
Leakage power
VDD+VTPVitVTNVinIon